TG1: III-V Semiconductor Quantum Devices
Lead Principal Investigator (LPI): 

Prof. Rajendra Singh

Major Objective of TG1:
 
To develop in-house fabrication capability of InP Semiconductor quantum devices, including on-demand single photon emitter, avalanche single photon detectors, ultra-low noise cryogenic amplifier and high frequency devices.

TG2: 2D Materials for Photonic Quantum Technologies
Lead Principal Investigator (LPI): 

Prof. Sourabh Lodha

Major Objective of TG2:
 
Demonstrate optimized, device-quality growth of 2D layered materials using MOCVD, CVD and MBE with controlled defect engineering and AI/ML based modelling of precursor screening and growth kinetics. To develop 2D layered quantum materials national growth facility and to develop and supply 2 inch, high quality, defect and heterostructure engineered wafers of 2D layered materials.

TG3: Reconfigurable and Scalable Photonic Qubit Architecture for Quantum Computing Heterogeneous and Monolithic Approaches

Prof. Shailendra Kumar Varshney

Major Objective of TG3

Design and development of various individual building blocks of quantum photonic circuits (QPC) and their testing and validation. Design of reconfigurable and scalable QPC for 20 and 50 photonic qubits and control and read-out electronics of photonic qubits